Shown at the Cree booth, #149 at Lightfair 2010 in Las Vegas, the
LR24HE is 30 percent more efficient than the best 2-foot-by-2-foot
fluorescent troffers and 15 percent more efficient than the led high bay light
fluorescent troffers. The LR24HE uses Cree TrueWhite? Technology to
deliver 3200 lumens at 3500 K with a 90 CRI. It is designed to last at
least 50,000 hours.
“By using the LR24HE, which is the most
efficient product for general illumination, lighting designers and
architects now have the freedom to reintroduce accent and decorative
lighting and still meet energy codes or achieve LEED points,” said Gary
Trott, Cree vice president market development, LED Lighting. “Cree
continues to leverage TrueWhite Technology to deliver breakthrough new
performance levels.
announces it is extending the warranty on its
entire family of fixture products to five years. Lengthening the
warranty lets customers know that Cree stands behind the long-term
performance and reliability of our fixtures.Ty Mitchell, Cree vice
president and general manager, LED Lighting said that they have almost
20,000 hours of real-world data on products from their early
installations nearly three years ago, and the performance is rock solid.
Professor Peter Parbrook, who has been appointed
to lead the GaN growth activity at the Tyndall National Institute using
strategic funding from Science Foundation Ireland, comments: “From our
existing AIXTRON reactors we are very familiar with the quality of
performance and engineering available with their tools. There are many
reasons why we opted for a LED high bay lighting
reactor for our GaN programme: for instance the flexible reactor
configuration which includes gap adjustment. Plus we can work with a
range of different substrate sizes to suit our various research
projects. Inherently, the tool also has high growth uniformity and we
are looking forward to using the ARGUS pyrometric system to give us
precision in-situ monitoring and process control.” The growth tool will
complement Tyndall’s existing expertise in the theory of GaN photonic
materials and fabrication of GaN based devices.
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