We appreciate the strong support from Veeco

President of Epistar, commented, “We are pleased to choose Veeco’s K465i as our GaN-on-Si development tool. We are excited about the potential of GaN-on-Si technology as we move to larger wafer sizes. We appreciate the strong support from Veeco, and look forward to this collaboration.”

William J. Miller, Ph.D., Veeco’s Executive Vice President, Process Equipment, commented, “We are very pleased that Epistar has chosen the K465i, which provides low cost-of-ownership and production worthiness, for its GaN-on-Si LED development. Large diameter Si wafers offer tremendous promise as a low cost alternative to sapphire for volume production of lower cost LEDs.”

We are pleased to have chosen the TurboDisc K465i MOCVD System as our first GaN-on-Si production system. It offers unparalleled throughput advantages, and its TurboDisc technology provides superior uniformity and low particle count, which is critical for producing GaN-on-Si wafers. We appreciate the strong support we have received from Veeco, and look forward to this and future collaborations.”

William J. Miller, Ph.D., Veeco’s Executive Vice President, Process Equipment, commented, “We are gratified that LG Siltron has chosen the K465i, which provides low cost-of-ownership and best-in-class yields, and look forward to supporting LG Siltron as they ramp production. The market for GaN-on-Si power devices continues to grow, and the K465i offers many advantages, such as improved device performance, lower manufacturing costs and increased productivity.”