a leading developer and manufacturer of LED lighting technologies and
solutions, and Toshiba Corporation, a world-leading electronic manufacturer,
today announced that they have entered into an agreement under which Bridgelux
will sell to Toshiba its industry-leading GaN-on-Silicon technology and related
assets, and the companies will strengthen and extend their strategic technology
collaboration, through an expanded licensing and manufacturing relationship.In
January, 2012, Bridgelux and Toshiba entered into a Joint Development and
Collaboration Agreement for the development of GaN-on-Silicon LED technologies.
The success of that relationship was demonstrated by Toshiba's announcements of
the achievement of world class performance for 8" GaN-on-Silicon LED wafers and
mass production of white LEDs. Both of these milestones were achieved using
Bridgelux's crystal growth and LED device technologies as well as Toshiba's
advanced silicon processes and manufacturing technologies.
The enhanced strategic relationship announced today provides for new business
opportunity through the expanded collaboration for next generation LED chips and
packages, or platforms, based on the jointly developed GaN-on-Silicon
technology, as well as a manufacturing arrangement securing Bridgelux a source
of supply for GaN-on-Silicon-based LED chips.Our agreement with Toshiba marks a
tremendous milestone in our long history of working closely together, allowing
Bridgelux to capitalize on our strong core LED technology platform, providing us
with significant new capital for growth, and reducing our capital requirements,"
said Brad Bullington, Chief Executive Officer of Bridgelux. "This agreement also
allows us to focus on what we do best, and what we think the market needs most
at this point in time: commercializing, productizing and bringing to market
LED-based solid state lighting technologies alongside a proven global scale
semiconductor manufacturing partner. We are one step closer to becoming the
world's leading solid state lighting technology architecture company."
"We are so excited with this deal that gaining GaN-on-Silicon technology and
related assets will contribute to drastically strengthening our LED business,
and bring us a high performance and competitive product line-up. We fully expect
our new Livermore team to play a leading role within Toshiba in the development
and rapid market penetration of GaN-on-Silicon LED chips," said Makoto
Hideshima, Executive Vice President of Semiconductor and Storage Products
Company, Corporate Vice President of Toshiba. "Entering a new phase of our
relationship with Bridgelux, we will be able to accelerate the scaled
manufacturing of 8" GaN-on-Silicon LED wafers, which will position both
companies for strong growth in our respective LED businesses. The GaN-on-Silicon
technology that we acquire will also bring us a breakthrough for Power Devices
development and production."
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